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HFS4N60 |
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| Part Number | HFS4N60 |
| Manufacturer | SEMIHOW |
| Description | HFS4N60 July 2005 HFS4N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 2.0 Ω ID = 4.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
Drain-Source Voltage
Drain Current Drain Current
– Continuous (TC = 25℃) – Continuous (TC = 100℃) IDM Drain Current – Pulsed (Note 1) VGS Gate-Source Volta... |
| Document |
 HFS4N60 Data Sheet
PDF 767.59KB |
| Distributor | Stock | Price | Buy |
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