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F2N60 |
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| Part Number | F2N60 |
| Manufacturer | Red Diamond Optoelectronics |
| Description | F2N60 N- MOS /N-CHANNEL POWER MOSFET ◆: ◇Applications:Electronic Ballast Electronic Transformer Switch Mode Power Supply ◆: RoHS ◇Features:Low Thermal Resistance High Speed Switching High I... |
| Features |
Low Thermal Resistance High Speed Switching High Input Resistance
RoHS Compliant
TO-220
:mm
◆(Tc=25℃)
◇Absolute Maximum Ratings(Tc=25℃)
Parameter
- Drain-Source Voltage
- Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
TC=25℃ TC=100℃
PD
Tj
Tstg
Value
600
±20 2.4 1.5 64
150
-55～150
Unit
V
V
A
W
℃
℃
0.1
123
◆(Tc=25℃)
1-Gate 2-Drain 3-Source
◇Electronic Characteristics(Tc=25℃)
Charcteristics - Drain-Source Breakdown Voltage
Gate Threshold Voltage
- Drain-Source Leakage Current
On State Drai... |
| Document |
 F2N60 Data Sheet
PDF 69.35KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | F2N60 |
ROUM |
2A 600V N-channel Enhancement Mode Power MOSFET |
|
| 2 | F2N60 |
Pan Jit International |
PJF2N60 |
|
| 3 | F2N60 |
UTC |
600V N-CHANNEL POWER MOSFET |
|
| 4 | F2001 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 5 | F2002 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|