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IXTA200N085T |
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| Part Number | IXTA200N085T |
| Manufacturer | IXYS |
| Description | Preliminary Technical Information TrenchMVTM Power MOSFET IXTA 200N085T IXTP 200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 85 200 5.0 V A mΩ Symbol VDSS VDGR VGSM ... |
| Features |
Ultra-low On Resistance
Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature
Advantages Easy to mount Space savings High power density
Applications Automotive
- Motor Drives - 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V
Systems High Current Switching Applications
© 2006 IXYS CORPORATION All rights reserved
DS99643 (11/06)
IXTA200N085T IXTP200N085T
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1
Ciss Coss Crss
VGS = 0... |
| Document |
 IXTA200N085T Data Sheet
PDF 206.22KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTA200N085T |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXTA200N085T7 |
IXYS Corporation |
Power MOSFET |
|
| 3 | IXTA200N055T2 |
IXYS |
Power MOSFET |
|
| 4 | IXTA200N055T2 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTA200N055T2-7 |
IXYS |
Power MOSFET |
|