7N60 |
Part Number | 7N60 |
Manufacturer | KIA |
Description | The KIA7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characterist... |
Features |
6.9A, 600V, RDS(on)= 1.1Ω @ VGS= 10 V Low gate charge ( typical 32nC) Low crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability
3. Pin configuration
Pin 1 2 3
Function Gate Drain Source
1 of 7
KIA
SEMICONDUCTORS
600V N-CHANNEL MOSFET
7N60
4. Absolute maximum ratings
Parameter Drain-source voltage Tc=25 ºC Drain current Tc=100 ºC Drain current pulsed (note 1) Gate-source voltage Single pulsed avalanche energy (note 2) Avalanche current (note 1) Repetitive avalanche energy (note 1) Peak diode recovery dv/dt (note 3) Tc=25 ºC Power dissipation de... |
Document |
7N60 Data Sheet
PDF 342.05KB |
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