Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
K1306 |
Click to view a larger image
| Part Number | K1306 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK1306 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V sour... |
| Features |
• • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1306 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Ts... |
| Document |
 K1306 Data Sheet
PDF 33.21KB |
| Distributor | Stock | Price | Buy |
|---|
