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MT41K512M8 |
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| Part Number | MT41K512M8 |
| Manufacturer | Micron Technology |
| Description | DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description DDR3L SDRAM (1.35V) is a low voltage version of the DDR3 (1.5V) SDRAM. ... |
| Features |
• VDD = VDDQ = 1.35V (1.283 –1.45V) • Backward compatible to VDD = VDDQ = 1.5V ±0.075V – Supports DDR3L devices to be backward compatible in 1.5V applications • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS (READ) latency (CL) • Programmable posted CAS additive latency (AL) • Programmable CAS (WRITE) latency (CWL) • Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) • Selectable ... |
| Document |
 MT41K512M8 Data Sheet
PDF 3.04MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT41K512M16 |
Micron Technology |
32 Meg x 16 x 8 Banks 1.35V DDR3L-RS SDRAM |
|
| 2 | MT41K512M4 |
Micron Technology |
1.35V DDR3L SDRAM |
|
| 3 | MT41K512M8 |
Micron |
Automotive DDR3L SDRAM |
|
| 4 | MT41K128M16 |
Micron Technology |
1.35V DDR3L SDRAM |
|
| 5 | MT41K128M8 |
Micron Technology |
Automotive DDR3L SDRAM |
|