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R1RW0416DGE-2PR |
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| Part Number | R1RW0416DGE-2PR |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designi... |
| Features |
• Single 3.3V supply: 3.3V ± 0.3V • Access time: 10ns / 12ns (max) • Completely static memory ⎯ No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible ⎯ All inputs and outputs • Operating current: 145mA / 130mA (max) • TTL standby current: 40mA (max) • CMOS standby current : 5mA (max) : 0.8mA (max) (L-version) : 0.5mA (max) (S-version) • Data retention current : 0.4mA (max) (L-version) : 0.2mA (max) (S-version) • Data retention voltage: 2.0V (min) (L-version , S-version) • Center VCC and VSS type pin out Ordering Information Type No. R1RW0416DGE-2PR R1RW04... |
| Document |
 R1RW0416DGE-2PR Data Sheet
PDF 567.58KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | R1RW0416DGE-2LR |
Renesas |
4M High Speed SRAM |
|
| 2 | R1RW0416D |
Renesas |
4M High Speed SRAM |
|
| 3 | R1RW0416DSB-0PR |
Renesas |
4M High Speed SRAM |
|
| 4 | R1RW0416DSB-2LR |
Renesas |
4M High Speed SRAM |
|
| 5 | R1RW0416DSB-2PR |
Renesas |
4M High Speed SRAM |
|