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2SC2312 |
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| Part Number | 2SC2312 |
| Manufacturer | HGSemi |
| Description | Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: PIN 1. 2. 3. 4. K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min... |
| Features |
• • • • HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2312 –T – SEATING PLANE 4 DESCRIPTION Designed for RF power amplifier on HF band mobile radio applications. T S C B F Q 1 2 3 A H U Z L R J STYLE 1: PIN 1. 2. 3. 4. K Specified 12V, 27MHz Characteristics PO = 18.5W GP = 10.5 dB min. at 18.5 W/27 MHz Emitter ballasted construction V BASE COLLECTOR EMITTER COLLECTOR G N D DIMENSIONS UNIT mm inches A 15.75 14.48 0.620 0.570 B 10.28 9.66 0.405 0.380 C 4.82 4.07 0.19 0.16 D 0.88 0.64 0.035 0.025 F 3.73 3.61 0.147 0.142 G 2.66 2.42 0.105 0.09... |
| Document |
 2SC2312 Data Sheet
PDF 275.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2310 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC2310 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 3 | 2SC2310 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor |
|
| 4 | 2SC2310 |
CHINA BASE |
NPN Silicon Epitaxial Planar Transistor |
|
| 5 | 2SC2312 |
Mitsubishi Electric |
RF POWER TRANSISTOR |
|