AP75T10GI-HF |
Part Number | AP75T10GI-HF |
Manufacturer | Advanced Power Electronics |
Description | Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package i... |
Features |
Junction-case Maixmum Thermal Resistance, Junction-ambient Value 2.8 65 Units ℃/W ℃/W 1 201002121
Data and specifications subject to change without notice
AP75T10GI-HF
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2
o
Test Conditions VGS=0V, ID=250uA VGS=10V, ID=24A VDS=VGS, ID=250uA VDS=10V, ID... |
Document |
AP75T10GI-HF Data Sheet
PDF 54.02KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AP75T10GI-HF-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | AP75T10GP |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | AP75T10GP-3 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | AP75T10GP-HF |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP75T10GP-HF |
Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |