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SSM5H06FE |
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| Part Number | SSM5H06FE |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter • • Combined Nch MOSFET and Schottky Diode in one Package. Small package Unit: mm 1.6±0.05 1... |
| Features |
ing temperature Symbol Tstg Topr (Note 3) Rating −55~125 −40~100 Unit °C °C
Weight: 3 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”... |
| Document |
 SSM5H06FE Data Sheet
PDF 147.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM5H01TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode |
|
| 2 | SSM5H03TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode |
|
| 3 | SSM5H05TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode |
|
| 4 | SSM5H07TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode |
|
| 5 | SSM5H08TU |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Diode |
|