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TK8P25DA |
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| Part Number | TK8P25DA |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | MOSFETs Silicon N-Channel MOS (π-MOS) TK8P25DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 1... |
| Features |
(1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK8P25DA
DPAK
1: Gate 2: Drain (Heatsink) 3: Source
©2015 Toshiba Corporation
1
Start of commercial production
2011-03
2015-08-03 Rev.4.0
TK8P25DA
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse a... |
| Document |
 TK8P25DA Data Sheet
PDF 268.42KB |
| Distributor | Stock | Price | Buy |
|---|
