HCTS109T |
Part Number | HCTS109T |
Manufacturer | Intersil Corporation |
Description | only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are cu... |
Features |
• QML Class T, Per MIL-PRF-38535 • Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - Latch-Up Free Under Any Conditions - SEP Effective LET No Upsets: >100 MEV-cm2/mg - Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • 3 Micron Radiation Hardened SOS CMOS • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.5V • LSTTL Input Logic Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min • Input Current Levels Ii ≤ 5mA at VOL, VOH Specifications Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (D... |
Document |
HCTS109T Data Sheet
PDF 121.11KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | HCTS109MS |
Intersil Corporation |
Radiation Hardened Dual JK Flip Flop | |
2 | HCTS10MS |
Intersil Corporation |
Radiation Hardened Triple 3-Input NAND Gate | |
3 | HCTS112MS |
Intersil Corporation |
Radiation Hardened Dual JK Flip-Flop | |
4 | HCTS11MS |
Intersil Corporation |
Radiation Hardened Triple 3-Input AND Gate | |
5 | HCTS132MS |
Intersil Corporation |
Radiation Hardened Quad 2-Input NAND Schmitt Trigger |