FLM0910-4F |
Part Number | FLM0910-4F |
Manufacturer | SUMITOMO |
Description | The FLM0910-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assure... |
Features |
• • • • • • High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FLM0910-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage ... |
Document |
FLM0910-4F Data Sheet
PDF 306.04KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FLM0910-12F |
ETC |
X-Band Internally Matched FET | |
2 | FLM0910-12F |
SUMITOMO |
X-Band Internally Matched FET | |
3 | FLM0910-15F |
SUMITOMO |
X-Band Internally Matched FET | |
4 | FLM0910-25F |
SUMITOMO |
X-Band Internally Matched FET | |
5 | FLM0910-3F |
SUMITOMO |
X / Ku-Band Internally Matched FET |