Features
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0 60 5V 10 10 0.4 1.6 1.3 2.6
UNIT V V nA µA V V V V
Collector Emitter Saturation Voltage Base Emitter Saturation Voltage
VCB=50V, IE=0 Ta=150 º C VCE(Sat)*I C=150mA,IB=15mA IC=500mA,IB=50mA VBE(Sat)*I C=150mA,IB=15mA IC=500mA,IB=50mA
0.6
Continental Device India Limited
Data Sheet
Page 1 of 4
http://www.Datasheet4U.com
NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2221 2N2222 TO-18 Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION DC Current Gain hFE IC=0.1mA,V CE=10V* IC=1mA,V CE=10V IC=10mA,VCE=10V* IC=150mA,VCE=1V* I...
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