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2N7002W |
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| Part Number | 2N7002W |
| Manufacturer | GME |
| Description | Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002W FEATURES z z z z z Low On-Resistance。 Low Gate Threshold Voltage. Low Input Capacitance. Fast Switching Speed. Low ... |
| Features |
z z z z z Low On-Resistance。 Low Gate Threshold Voltage. Low Input Capacitance. Fast Switching Speed. Low Input/Output Leakage.
Pb
Lead-free
APPLICATIONS
z z N-channel enhancement mode effect transistor. Switching application. SOT-323
ORDERING INFORMATION
Type No. 2N7002W Marking 7002 Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol VDSS VDGR VGSS ID PD RθJA TJ, Tstg Parameter Drain-Source voltage Drain-Gate voltage(RGS≤1MΩ) Gate -Source voltage - continuous -Non Repetitive (tp<50μs) Maximum Drain current -continuous -Pulsed Value 60 60 ±20 ±40 115 800 200 625... |
| Document |
 2N7002W Data Sheet
PDF 237.86KB |
| Distributor | Stock | Price | Buy |
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