NT5CB512M8CN |
Part Number | NT5CB512M8CN |
Manufacturer | Nanya |
Description | The 4Gb Double-Data-Rate-3 (DDR3(L)) DRAM is a high-speed CMOS SDRAM containing 4,294,967,296 bits. It is internally configured as an octal-bank DRAM. The 4Gb chip is organized as 64Mbit x 8 I/O x 8 ... |
Features |
JEDEC DDR3 Compliant - 8n Prefetch Architecture - Differential Clock(CK/) and Data Strobe(DQS/ ) - Double-data rate on DQs, DQS and DM Signal Integrity - Configurable DS for system compatibility - Configurable On-Die Termination - ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ± 1%) Data Integrity - Auto Self Refresh (ASR) by DRAM built-in TS - Auto Refresh and Self Refresh Modes Signal Synchronization - Write Leveling via MR settings - Read Leveling via MPR Power Saving Mode - Partial Array Self Refresh (PASR) - Power Down Mode 1 Interface and ... |
Document |
NT5CB512M8CN Data Sheet
PDF 3.88MB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NT5CB512M8BN |
Nanya |
4Gb DDR3 SDRAM B-Die | |
2 | NT5CB512M8DN |
Nanya |
Industrial and Automotive DDR3(L) 4Gb SDRAM | |
3 | NT5CB512M8EQ |
Nanya |
Commercial and Industrial DDR3 4Gb SDRAM | |
4 | NT5CB512M4BN |
Nanya |
2Gb DDR3 SDRAM B-Die | |
5 | NT5CB512M4DN |
Nanya |
2Gb DDR3 SDRAM D-Die |