H5TQ1G63DFR-xxL |
Part Number | H5TQ1G63DFR-xxL |
Manufacturer | Hynix |
Description | The H5TQ1G6(8)3DFR-xxx series are a 1,073,741,824-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high ba... |
Features |
and Ordering Information
FEATURES
• DQ Power & Power supply : VDD & VDDQ = 1.5V +/0.075V • DQ Ground supply : VSSQ = Ground • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • Programmable BL=4 supported (tCCD=2CLK) for Digital consumer Applications. • Programmable ZQ calibration supported • BL switch on the fly • 8banks • On chip DLL align DQ, DQS and DQS transition with CK • Average Refresh Cycle (Tcase of 0 oC~ 95 oC) transition - 7.8 µs at -40oC ~ 85 oC • DM masks write data-in at the both rising and falling - 3.9 µs at 85oC ~ 95 oC edges of t... |
Document |
H5TQ1G63DFR-xxL Data Sheet
PDF 330.93KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | H5TQ1G63DFR-xxC |
Hynix |
1Gb DDR3 SDRAM | |
2 | H5TQ1G63DFR-xxI |
Hynix |
1Gb DDR3 SDRAM | |
3 | H5TQ1G63DFR-xxJ |
Hynix |
1Gb DDR3 SDRAM | |
4 | H5TQ1G63AFP-xxC |
Hynix Semiconductor |
(H5TQ1Gx3AFP-xxC) DDR3 SDRAM - 1Gb | |
5 | H5TQ1G63BFR-xxC |
Hynix Semiconductor |
1Gb DDR3 SDRAM |