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2SC640 |
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| Part Number | 2SC640 |
| Manufacturer | ETC |
| Description | 2SC640 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As compl... |
| Features |
Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, IE=0.5mA at f=1KHz, RS=500Ω NF 4 dB COB 2.5 pF fT 300 MHz VCE(sat) 0.15 0.3 V IEBO 0.1 μA ICBO 0.1 μA V(BR)EBO 5 V V(BR)CEO 30 V V(BR)CBO 40 V hFE hFE hFE hFE hFE 40 70 120 200 350 80 140 240 400 700 Symbol Min. Typ. Max. Unit
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7/15/2011
Free Datasheet http://www.nDatasheet.com
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| Document |
 2SC640 Data Sheet
PDF 93.18KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC641 |
Hitachi Semiconductor |
SILICON EPITAXIAL PLANAR |
|
| 2 | 2SC643 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC643 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 4 | 2SC643A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC643A |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|