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HGTP12N60C3D |
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| Part Number | HGTP12N60C3D |
| Manufacturer | Fairchild Semiconductor |
| Description | HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best... |
| Features |
of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49182.
Features
• 24A, 600V at TC = 25oC • Typical Fall Time at TJ = ... |
| Document |
 HGTP12N60C3D Data Sheet
PDF 154.93KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HGTP12N60C3 |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 2 | HGTP12N60C3 |
Intersil Corporation |
N-Channel IGBT |
|
| 3 | HGTP12N60C3D |
Intersil Corporation |
N-Channel IGBT |
|
| 4 | HGTP12N60A4 |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 5 | HGTP12N60A4 |
Intersil Corporation |
N-Channel IGBT |
|