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HGTG15N120C3D |
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| Part Number | HGTG15N120C3D |
| Manufacturer | Intersil Corporation |
| Description | The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state... |
| Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. The diode used in anti-Parallel with the IGBT is the same as the RHRP15120. The IGBT was formerly development type TA49145.
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| Document |
 HGTG15N120C3D Data Sheet
PDF 101.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HGTG15N120C3 |
Intersil Corporation |
N-Channel IGBT |
|
| 2 | HGTG10N120BN |
Fairchild Semiconductor |
35A/ 1200V/ NPT Series N-Channel IGBT |
|
| 3 | HGTG10N120BN |
Intersil Corporation |
N-Channel IGBT |
|
| 4 | HGTG10N120BND |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 5 | HGTG10N120BND |
Intersil Corporation |
N-Channel IGBT |
|