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HGTG10N120BND |
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| Part Number | HGTG10N120BND |
| Manufacturer | Intersil Corporation |
| Description | HGTG10N120BND Data Sheet January 2000 File Number 4579.3 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a... |
| Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49302.
Features
• 35A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical F... |
| Document |
 HGTG10N120BND Data Sheet
PDF 82.69KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HGTG10N120BN |
Fairchild Semiconductor |
35A/ 1200V/ NPT Series N-Channel IGBT |
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| 2 | HGTG10N120BN |
Intersil Corporation |
N-Channel IGBT |
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| 3 | HGTG10N120BND |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 4 | HGTG10N120BND |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | HGTG11N120CN |
Fairchild Semiconductor |
N-Channel IGBT |
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