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HGT1S12N60A4S9A |
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| Part Number | HGT1S12N60A4S9A |
| Manufacturer | Fairchild Semiconductor |
| Description | HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combin... |
| Features |
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49335.
Features
• >100kHz Operation at 390V, 12A • 200kHz Operation at 390V, 9A • 600V Switching SOA Capability • Ty... |
| Document |
 HGT1S12N60A4S9A Data Sheet
PDF 229.62KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HGT1S12N60A4S |
Intersil Corporation |
N-Channel IGBT |
|
| 2 | HGT1S12N60A4DS |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 3 | HGT1S12N60A4DS |
Intersil Corporation |
N-Channel IGBT |
|
| 4 | HGT1S12N60A4DS |
ON Semiconductor |
N-Channel IGBT |
|
| 5 | HGT1S12N60B3DS |
Fairchild Semiconductor |
N-Channel IGBT |
|