HGT1S10N120BNS Intersil Corporation N-Channel IGBT Datasheet, en stock, prix

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HGT1S10N120BNS

Intersil Corporation
HGT1S10N120BNS
HGT1S10N120BNS HGT1S10N120BNS
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Part Number HGT1S10N120BNS
Manufacturer Intersil Corporation
Description HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet January 2000 File Number 4575.2 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NP...
Features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49290. Features
• 35A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduc...

Document Datasheet HGT1S10N120BNS Data Sheet
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