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IRGP4066PBF |
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| Part Number | IRGP4066PBF |
| Manufacturer | International Rectifier |
| Description | PD - 97577 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSO... |
| Features |
• • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package IRGP4066PbF IRGP4066-EPbF C VCES = 600V IC(Nominal) = 75A G E tSC ≥ 5μs, TJ(max) = 175°C n-channel VCE(on) typ. = 1.7V Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Rel... |
| Document |
 IRGP4066PBF Data Sheet
PDF 285.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRGP4066-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRGP4066D-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRGP4066DPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRGP4062-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRGP4062D-EPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|