BD637 Inchange Semiconductor Silicon NPN Power Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

BD637

Inchange Semiconductor
BD637
BD637 BD637
zoom Click to view a larger image
Part Number BD637
Manufacturer Inchange Semiconductor
Description ·DC Current Gain - : hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) ·Complement to Type BD638 ·Minimum Lot-to-Lot variations for robust device performance and rel...
Features ector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 2V ICES Collector Cutoff Current VCE= 100V; VBE= 0 hFE-1 DC Current Gain IC= 25mA; VCE= 2V hFE-2 DC Current Gain IC= 1A; VCE= 2V BD637 MIN MAX UNIT 80 V 100 V 5 V 0.6 V 1.3 V 0.2 mA 40 25 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notif...

Document Datasheet BD637 Data Sheet
PDF 189.23KB
Distributor Stock Price Buy

Similar Datasheet

No. Partie # Fabricant Description Fiche Technique
1 BD63000MUV
ROHM
3-phase brushless motor pre-driver Datasheet
2 BD63001AMUV
ROHM
Three-Phase Brushless Motor Predriver Datasheet
3 BD63002AMUV
ROHM
3-Phase Brushless Motor Pre-driver Datasheet
4 BD63002MUV
ROHM
3-phase brushless motor pre-driver Datasheet
5 BD63005AMUV
ROHM
Three-Phase Brushless Motor Driver Datasheet
More datasheet from Inchange Semiconductor



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact