2SC4180 |
Part Number | 2SC4180 |
Manufacturer | Jin Yu Semiconductor |
Description | 2 SC4180 TRANSISTOR (NPN) FEATURES High DC Current Gain APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Paramete... |
Features |
High DC Current Gain APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 120 120 5 50 150 833 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR SOT –323 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter b... |
Document |
2SC4180 Data Sheet
PDF 409.40KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | 2SC4180 |
GME |
Silicon Epitaxial Planar Transistor | |
2 | 2SC4180 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
3 | 2SC4180 |
Kexin |
NPN Silicon Epitaxial Transistor | |
4 | 2SC4180W |
Galaxy Semi-Conductor |
Silicon Epitaxial Planar Transistor | |
5 | 2SC4181 |
NEC |
NPN SILICON EPITAXIAL TRANSISTORS |