2SC3123 Inchange Semiconductor Silicon NPN RF Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

2SC3123

Inchange Semiconductor
2SC3123
2SC3123 2SC3123
zoom Click to view a larger image
Part Number 2SC3123
Manufacturer Inchange Semiconductor
Description ·High Conversion Gain Gce = 23dB TYP. ·Low Reverse Transfer Capacitance Cre = 0.4pF TYP. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for...
Features ollector Cutoff Current VCB= 25V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 20 V 0.1 μA 1.0 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 40 300 Cre Reverse Transfer Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz fT Current-Gain—Bandwidth Product IC= 5mA ; VCE= 10V 0.4 0.5 pF 900 1400 MHz Gce Conversion Gain NF Noise Figure VCC= 12V;f= 200MHz,fL= 260MHz 20 23 dB VCC= 12V;f= 200MHz,fL= 260MHz 3.8 5.5 dB NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented onl...

Document Datasheet 2SC3123 Data Sheet
PDF 187.41KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SC3120
Toshiba Semiconductor
Silicon NPN Transistor Datasheet
2 2SC3120
Kexin
Silicon NPN Transistor Datasheet
3 2SC3121
Toshiba Semiconductor
Silicon NPN Transistor Datasheet
4 2SC3121
Kexin
Silicon NPN Transistor Datasheet
5 2SC3121
Inchange Semiconductor
Silicon NPN RF Transistor Datasheet
More datasheet from Inchange Semiconductor



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact