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2N3740 |
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| Part Number | 2N3740 |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, satura... |
| Features |
• • • • Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Complementary to NPN 2N3766 (2N3740) Medium Power PNP Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applicatio... |
| Document |
 2N3740 Data Sheet
PDF 62.60KB |
| Distributor | Stock | Price | Buy |
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|---|---|---|---|---|
| 1 | 2N3740 |
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