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2SB1217 |
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| Part Number | 2SB1217 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1818 ·Minimum Lot-to-Lot variations f... |
| Features |
rwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= -1.5A; IB= -0.15A
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -0.2A ; VCE= -2V
hFE-2
DC Current Gain
IC= -0.6A ; VCE= -2V
hFE-3
DC Current Gain
IC= -2.0A ; VCE= -2V
hFE-2 Classifications M L K 100-200 160-320 200-400 2SB1217 MIN TYP. MAX UNIT -0.3 V -1.2 V -10 μA -10 μA 60 100 400 50 NOTICE： ISC reserves the rights to make change... |
| Document |
 2SB1217 Data Sheet
PDF 212.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1214 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
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| 2 | 2SB1215 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
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| 3 | 2SB1215 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
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| 4 | 2SB1215 |
Kexin |
Transistors |
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| 5 | 2SB1215 |
ON Semiconductor |
Bipolar Transistor |
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