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2SA1611 |
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| Part Number | 2SA1611 |
| Manufacturer | Jin Yu Semiconductor |
| Description | 2SA1 61 1 TRANSISTOR(PNP) FEATURES High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter C... |
| Features |
High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -60 -50 -5 -100 150 833 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR SOT –323 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter b... |
| Document |
 2SA1611 Data Sheet
PDF 277.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1610 |
NEC |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR |
|
| 2 | 2SA1611 |
JCET |
PNP Transistor |
|
| 3 | 2SA1611 |
GME |
PNP Silicon Transistor |
|
| 4 | 2SA1611 |
NEC |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR |
|
| 5 | 2SA1611 |
TRANSYS |
Transistor |
|