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H5TQ1G63EFR-xxL |
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| Part Number | H5TQ1G63EFR-xxL |
| Manufacturer | SK Hynix |
| Description | The H5TQ1G6(8)3EFR-xxx series are a 1,073,741,824-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high ba... |
| Features |
and Ordering Information
FEATURES
• DQ Power & Power supply : VDD & VDDQ = 1.5V +/0.075V • DQ Ground supply : VSSQ = Ground • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock • Programmable CAS latency 6, 7, 8, 9, 10, 11, 12, 13 and 14 supported • Programmable additive latency 0, CL-1, and CL-2 ... |
| Document |
 H5TQ1G63EFR-xxL Data Sheet
PDF 501.63KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | H5TQ1G63EFR-xxC |
SK Hynix |
1Gb DDR3 SDRAM |
|
| 2 | H5TQ1G63EFR-xxI |
SK Hynix |
1Gb DDR3 SDRAM |
|
| 3 | H5TQ1G63EFR-xxJ |
SK Hynix |
1Gb DDR3 SDRAM |
|
| 4 | H5TQ1G63AFP-xxC |
Hynix Semiconductor |
(H5TQ1Gx3AFP-xxC) DDR3 SDRAM - 1Gb |
|
| 5 | H5TQ1G63BFR-xxC |
Hynix Semiconductor |
1Gb DDR3 SDRAM |
|