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H5TQ1G83BFR-xxC |
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| Part Number | H5TQ1G83BFR-xxC |
| Manufacturer | Hynix Semiconductor |
| Description | The H5TQ1G43BFR-xxC, H5TQ1G83BFR-xxC and H5tQ1G63BFR-xxC are a 1,073,741,824-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large... |
| Features |
and Ordering Information
FEATURES
• VDD=VDDQ=1.5V +/- 0.075V • Fully differential clock inputs (CK, CK) operation • Differential Data Strobe (DQS, DQS) • On chip DLL align DQ, DQS and DQS transition with CK transition • DM masks write data-in at the both rising and falling edges of the data strobe • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock • Programmable CAS latency 6, 7, 8, 9, 10 supported • Programmable additive latency 0, CL-1, and CL-2 supported • Programmable CAS Write latency (CWL) = 5, 6, 7 • Programmable burst le... |
| Document |
 H5TQ1G83BFR-xxC Data Sheet
PDF 924.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | H5TQ1G83AFP-xxC |
Hynix Semiconductor |
(H5TQ1Gx3AFP-xxC) DDR3 SDRAM - 1Gb |
|
| 2 | H5TQ1G83DFR-xxC |
Hynix |
1Gb DDR3 SDRAM |
|
| 3 | H5TQ1G83DFR-xxI |
Hynix |
1Gb DDR3 SDRAM |
|
| 4 | H5TQ1G83DFR-xxJ |
Hynix |
1Gb DDR3 SDRAM |
|
| 5 | H5TQ1G83DFR-xxL |
Hynix |
1Gb DDR3 SDRAM |
|