MBR20035CT Naina Semiconductor (MBR20020CT - MBR20040CTR) Schottky Power Diode Datasheet, en stock, prix

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MBR20035CT

Naina Semiconductor
MBR20035CT
MBR20035CT MBR20035CT
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Part Number MBR20035CT
Manufacturer Naina Semiconductor
Description Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN ...
Features



• Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 135 oC TC = 25 oC tp = 8.3 ms Conditions MBR20020CT (R) 20 14 20 200 MBR20030CT MBR20035CT (R) (R) 30 21 30 200 35 25 35 200 MBR20040CT (R) 40 28 40 200 Units V V V A IFSM ...

Document Datasheet MBR20035CT Data Sheet
PDF 184.15KB
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