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BDT63 |
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| Part Number | BDT63 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... |
| Features |
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
BDT63/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT63
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDT63A BDT63B
IC= 30mA ;IB=0
BDT63C
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 3V
VECF ICEO ICBO IEBO
C-E Diode Forward Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current
IF= 3A
VCE=... |
| Document |
 BDT63 Data Sheet
PDF 215.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT60 |
Power Innovations Limited |
PNP Transistor |
|
| 2 | BDT60 |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 3 | BDT60 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | BDT60A |
Power Innovations Limited |
PNP Transistor |
|
| 5 | BDT60A |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|