BD651 Comset Semiconductors SILICON DARLINGTON POWER TRANSISTORS Datasheet, en stock, prix

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BD651

Comset Semiconductors
BD651
BD651 BD651
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Part Number BD651
Manufacturer Comset Semiconductors
Description SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended...
Features 651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit IB Base Current 300 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataSheet.net/ Ts Storage Temperature range Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-MB RthJ-A Ratings From junction to mounting base From junction to ambient in free air Value 2 62.5 Unit K/W K/W 17/10/2012 COMSET SEMICONDUCTORS 2|5 Datasheet pdf - http://www.DataSheet4U.co.kr/ SEMIC...

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