TQM7M5013 |
Part Number | TQM7M5013 |
Manufacturer | TriQuint Semiconductor |
Description | The TQM7M5013 is an input power controlled, multiple gain state, quad band, GSM/EDGE PAM designed for use with the Qualcomm QTR/RTR8600 WEDGE solutions. This highly efficient PAM significantly improve... |
Features |
• Digital Control Interface • Low Current At Backed-Off Power Levels • Input Power Controlled – GMSK & 8PSK • LB Has 4 modes – HP, MP, LP, & ULP • HB Has 3 modes – HP, LP, & ULP • HBT/PHEMT High Efficiency Technology • High –Power Linearity • Standard LB & HB Paths • 50 Ω Input & Output Impedance • Halogen-Free • 11 Pin Package General Description The TQM7M5013 is an input power controlled, multiple gain state, quad band, GSM/EDGE PAM designed for use with the Qualcomm QTR/RTR8600 WEDGE solutions. This highly efficient PAM significantly improves talk-time while still providing an easy to use so... |
Document |
TQM7M5013 Data Sheet
PDF 225.57KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | TQM7M5012 |
TriQuint Semiconductor |
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module | |
2 | TQM7M5012H |
TriQuint Semiconductor |
Quad-Band GSM / GPRS / EDGE-Polar Power Amplifier Module | |
3 | TQM7M5002 |
TriQuint Semiconductor |
Quad-Band GSM/EDGE Polar Power Amplifier Module | |
4 | TQM7M5003 |
TriQuint Semiconductor |
Quad-Band GSM/EDGE Polar Power Amplifier Module | |
5 | TQM7M5004 |
TriQuint Semiconductor |
GSM/EDGE Multi-mode Power Amplifier Module |