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VFT1045CBP |
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| Part Number | VFT1045CBP |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | New Product VFT1045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A TMBS ® ITO-220AB FEATURES • Trench ... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 VFT1045CBP PIN 1 PIN 3 PIN 2 2 3 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TOP max. 2 x 5.0 A 45 V 100 A 0.41 V 150 °C MECHANICAL DATA Case:... |
| Document |
 VFT1045CBP Data Sheet
PDF 139.98KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | VFT1045C |
Vishay Siliconix |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier |
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| 2 | VFT1045BP |
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Trench MOS Barrier Schottky Rectifier |
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| 3 | VFT10200C |
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Trench MOS Barrier Schottky Rectifier |
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| 4 | VFT10200C-E3 |
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| 5 | VFT1060C |
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
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