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2SC3336 |
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| Part Number | 2SC3336 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SC3336 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3336 Absolute Maximum Ratings (... |
| Features |
≅ = 150 V I C = 7.5 A, IB = 1.5 A*1
Emitter to base breakdown voltage Collector cutoff current
V(BR)EBO I CBO I CEO
10 — — 12 5 — — — — —
— — — — — — — — — 0.3
— 50 50 — — 1.0 1.5 0.5 1.5 0.5
V µA µA
DC current transfer ratio
hFE1 hFE2
Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test
VCE(sat) VBE(sat) t on t stg tf
2
2SC3336
Maximum Collector Dissipation Curve 150 Collector power dissipation PC (W) 100 30 Collector current IC (A) iC(peak)
µs 25 0 µs s 5 0µ s s 25 1m 0m n =1 tio era PW Op °C DC = 25 TC... |
| Document |
 2SC3336 Data Sheet
PDF 41.20KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3330 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 2 | 2SC3330 |
PACO |
NPN Silicon Epitaxial Planar Transistor |
|
| 3 | 2SC3330 |
Bluecolour |
NPN Silicon Epitaxial Planar Transistor |
|
| 4 | 2SC3330 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistor |
|
| 5 | 2SC3330 |
JCET |
NPN Transistor |
|