2SC3279 Toshiba Semiconductor NPN TRANSISTOR Datasheet, en stock, prix

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2SC3279

Toshiba Semiconductor
2SC3279
2SC3279 2SC3279
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Part Number 2SC3279
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Description 2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications · High DC current gain and excellent hFE linearity : hFE (1) ...
Features se breakdown voltage Symbol ICBO IEBO V (BR) CEO V (BR) EBO hFE (1) DC current gain (Note 2) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 30 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 IE = 1 mA, IC = 0 VCE = 1 V, IC = 0.5 A VCE = 1 V, IC = 2 A IC = 2 A, IB = 50 mA VCE = 1 V, IC = 2 A VCE = 1 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Min ¾ ¾ 10 6 140 70 ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ 200 0.2 0.86 150 27 Max 0.1 0.1 ¾ ¾ 600 ¾ 0.5 1.5 ¾ ¾ V V MHz pF Unit mA mA V V Note 2: hFE (1) classi...

Document Datasheet 2SC3279 Data Sheet
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