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PMD1603K |
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| Part Number | PMD1603K |
| Manufacturer | Inchange Semiconductor |
| Description | ·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= 100V(Min) ·Complement to type PMD1703K APPLICATIONS ·Designed for general purpose amplifier and low frequency switching application... |
| Features |
ansistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
PMD1603K
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 100mA; IB= 0
100
V
V(BR)CER
Collector-Emitter Breakdown Voltage
IC= 100mA; RBE= 2.2kΩ
100
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 10A; IB= 40mA
2.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 10A; IB= 40mA
2.8
V
VBE(on)
Base-Emitter On Voltage
IC= 10A; VCE= 3V
2.8
V
ICER
Collector Cutoff current
VCE= 100V; RBE=2.2KΩ
7.0
mA
IEBO
Emitter Cut-off current
VEB= 5V; IC= 0
3.0
mA
h... |
| Document |
 PMD1603K Data Sheet
PDF 111.70KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | PMD1603K |
Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
|
| 2 | PMD1601K |
Inchange Semiconductor |
Silicon NPN Darlingtion Power Transistor |
|
| 3 | PMD1601K |
Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
|
| 4 | PMD1602K |
Inchange Semiconductor |
Silicon NPN Darlingtion Power Transistor |
|
| 5 | PMD1602K |
Central Semiconductor |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS |
|