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BUV82 |
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| Part Number | BUV82 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)-BUV82 = 450V(Min)-BUV83 ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC... |
| Features |
：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
BUV82/83
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BUV82
400
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 50mA ;IB= 0
V
BUV83
450
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A
1.5
V
3.0
V
VBE(sat)-1 Base-Emitter Saturation Voltage
VBE(sat)-2 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff ... |
| Document |
 BUV82 Data Sheet
PDF 220.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUV83 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | BUV89 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | BUV10 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | BUV10N |
Seme LAB |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
|
| 5 | BUV11 |
Motorola Inc |
20 AMPERES NPN SILICON POWER METAL TRANSISTOR |
|