FDMB2307NZ |
Part Number | FDMB2307NZ |
Manufacturer | Fairchild Semiconductor |
Description | This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, whic... |
Features |
Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A Max rS1S2(on) = 24 mΩ at VGS = 2.5 V, ID = 6.7 A Low Profile - 0.8 mm maximum - in the new package MicroFET 2x3 mm HBM ESD protection level > 2 kV (Note 3) RoHS Compliant
October 2011
General Description
This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flo... |
Document |
FDMB2307NZ Data Sheet
PDF 357.44KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FDMB2307NZ |
ON Semiconductor |
Dual N-Channel MOSFET | |
2 | FDMB2308PZ |
Fairchild Semiconductor |
MOSFET | |
3 | FDMB2308PZ |
ON Semiconductor |
Dual P-Channel MOSFET | |
4 | FDMB3800N |
Fairchild Semiconductor |
Dual N-Channel PowerTrench MOSFET | |
5 | FDMB3800N |
ON Semiconductor |
Dual N-Channel MOSFET |