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130NTD |
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| Part Number | 130NTD |
| Manufacturer | Naina Semiconductor |
| Description | Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabili... |
| Features |
• • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 13 130NTD Maximum Ratings (TA = 250C unless otherwise noted) Parameter Maximum average forward current @ TJ = 0 85 C Maximum average RMS forward current Maximum non-repetitive surge current @ t = 10ms 2 Maximum I t for fusing @ t = 10ms Symbol IF(AV) IF(RMS) IFSM It 2 Values 130 300 3300 51 Units A A A kA s M2 PACKAGE 2 Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Operating junction temperature range... |
| Document |
 130NTD Data Sheet
PDF 121.19KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 130NT3 |
Naina Semiconductor |
Non-isolated Thyristor Module |
|
| 2 | 130NTT |
Naina Semiconductor |
Thyristor-Thyristor |
|
| 3 | 130N4LF7 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | 130N6F7 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 5 | 130N8F7 |
STMicroelectronics |
N-channel Power MOSFET |
|