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3DG122 |
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| Part Number | 3DG122 |
| Manufacturer | Shaanxi Qunli Electric |
| Description | www.DataSheet4U.net Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG122 NPN Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar techno... |
| Features |
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA:
Parameter name Total Dissipation Max. Collector Current Junction Temperature Storage Temperature C-B Breakdown Voltage Symbols Unit Specifications A B C D
(Ta = 25°C )
Test Condition Ta=25°C
Ptot ICM Tjm Tstg
V(BR)CBO C-E Breakdown Voltage V(BR)CEO E-B Brea... |
| Document |
 3DG122 Data Sheet
PDF 50.65KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3DG12 |
Shaanxi Qunli Electric |
NPN Silicon High Frequency Middle Power Transistor |
|
| 2 | 3DG1213 |
LZG |
SILICON NPN TRANSISTOR |
|
| 3 | 3DG1213A |
LZG |
SILICON NPN TRANSISTOR |
|
| 4 | 3DG100 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor |
|
| 5 | 3DG1008 |
LZG |
SILICON NPN TRANSISTOR |
|