RJK03B9DPA Renesas Technology Silicon N Channel Power MOS FET Power Switching Datasheet, en stock, prix

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RJK03B9DPA

Renesas Technology
RJK03B9DPA
RJK03B9DPA RJK03B9DPA
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Part Number RJK03B9DPA
Manufacturer Renesas (https://www.renesas.com/) Technology
Description of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th...
Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.3 m typ. (at VGS = 10 V)
 Pb-free
 Halogen-free




 REJ03G1791-0320 Rev.3.20 May 12, 2010 Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channe...

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