IPB107N20N3G |
Part Number | IPB107N20N3G |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Su... |
Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification 200 V 10.7 mW 88 A Type IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G Package Marking PG-TO263-3 107N20N PG-TO220-3 110N20N PG-TO262-3 110N20N Maximum ratings, at T j=25 °C, unless otherwise specified P... |
Document |
IPB107N20N3G Data Sheet
PDF 629.28KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IPB107N20N3 |
Infineon |
Power-Transistor | |
2 | IPB107N20N3 |
INCHANGE |
N-Channel MOSFET | |
3 | IPB107N20NA |
Infineon |
Power-Transistor | |
4 | IPB107N20NA |
INCHANGE |
N-Channel MOSFET | |
5 | IPB100N04S2-04 |
Infineon Technologies |
Power-Transistor |