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2SA1789 |
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| Part Number | 2SA1789 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for au... |
| Features |
on Voltage
IC= -6A; IB= -0.6A
ICBO
Collector Cutoff Current
VCB= -60V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -2A ; VCE= -2V
hFE Classifications D E F 60-120 100-200 160-320 2SA1789 MIN TYP. MAX UNIT -60 V -0.5 V -2.0 V -10 μA -10 μA 60 320 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The prod... |
| Document |
 2SA1789 Data Sheet
PDF 198.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1780 |
Rohm |
TRANSISTORS |
|
| 2 | 2SA1781 |
Sanyo Semicon Device |
PNP / NPN Transistor |
|
| 3 | 2SA1782 |
Sanyo |
Silicon Transistor |
|
| 4 | 2SA1783 |
Sanyo Semicon Device |
PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
|
| 5 | 2SA1784 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|