SPP21N50C3 |
Part Number | SPP21N50C3 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated •... |
Features |
tive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt
Rev. 3.2
7)
A V
-55...+150
SPP21N50C3 SPI21N50C3, SPA21N50C3
Maximum Ratings Parameter Drain Source voltage slope
VDS = 400 V, ID = 21 A, Tj = 125 °C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footp... |
Document |
SPP21N50C3 Data Sheet
PDF 777.42KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPP21N50C3 |
INCHANGE |
N-Channel MOSFET | |
2 | SPP21N10 |
Infineon Technologies |
SIPMOS Power-Transistor | |
3 | SPP21N10 |
Infineon Technologies |
SIPMOS Power-Transistor | |
4 | SPP2095 |
SYNC Power |
P-Channel MOSFET | |
5 | SPP20N60C2 |
Infineon Technologies |
Cool MOS Power Transistor |