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IRF630A |
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| Part Number | IRF630A |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·This device is ... |
| Features |
tion to Ambient www.DataSheet4U.com
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-stage Resistance Gate Source Leakage Current Zero Gate Voltage Drain Current Diode Forward Voltage CONDITIONS VGS= 0; ID= 0.25mA VDS= VGS; ID= 0.25mA VGS= 10V; ID= 4.5A VGS= ±30V;VDS= 0 VDS= 200V; VGS= 0 IF=9A; VGS= 0 MIN 200 2 IRF630A MAX UNIT V 4 0.4 ±100 10 1.5 V Ω nA uA V w w s... |
| Document |
 IRF630A Data Sheet
PDF 256.62KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF630 |
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| 2 | IRF630 |
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| 3 | IRF630 |
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| 4 | IRF630 |
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| 5 | IRF630 |
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