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CEU3060 |
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| Part Number | CEU3060 |
| Manufacturer | Chino-Excel Technology |
| Description | N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A , RDS(ON) = 6.6mΩ @VGS = 10V. RDS(ON) = 9.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and c... |
| Features |
30V, 75A , RDS(ON) = 6.6mΩ @VGS = 10V. RDS(ON) = 9.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED3060/CEU3060
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30
Units V V A A W W/ C C
±20
75 300 62.5 0.5 -55 to 150
Maximum Power Dissipation @ TC... |
| Document |
 CEU3060 Data Sheet
PDF 417.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CEU301J |
Mallory |
Disc Ceramic Capacitors |
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| 2 | CEU3055L |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor |
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| 3 | CEU3055L3 |
Chino-Excel Technology |
Dual N-Channel Enhancement Mode Field Effect Transistor |
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| 4 | CEU3055L5 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor |
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| 5 | CEU3070 |
CET |
N-Channel MOSFET |
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